Kurt E. Wampler
27Patents
12h-index
16Co-inventors
78Inventor score
Filing activity: May 3, 1995 → Jun 13, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7175940B2 | Method of two dimensional feature model calibration and optimization | Physics | 264 | Expired |
| US6114071A | Method of fine feature edge tuning with optically-halftoned mask | Physics | 238 | Expired |
| US5663893A | Method for generating proximity correction features for a lithographic mask pattern | Electricity | 164 | Expired |
| US5821014A | Optical proximity correction method for intermediate-pitch features using sub-resolution scattering bars on a mask | Physics | 163 | Expired |
| US6670081B2 | Optical proximity correction method utilizing serifs having variable dimensions | Physics | 34 | Expired |
| US7247574B2 | Method and apparatus for providing optical proximity features to a reticle pattern for deep sub-wavelength optical lithography | Physics | 32 | Expired |
| US6312854A | "Method of patterning sub-0.25 lambda line features with high transmission, ""attenuated"" phase shift masks" | Physics | 26 | Expired |
| US6851103B2 | Method and apparatus for decomposing semiconductor device patterns into phase and chrome regions for chromeless phase lithography | Physics | 26 | Expired |
| US7138212B2 | Method and apparatus for performing model-based layout conversion for use with dipole illumination | Physics | 22 | Expired |
| US6623895B2 | Hybrid phase-shift mask | Physics | 21 | Expired |
| US7550235B2 | Method and apparatus for performing model based placement of phase-balanced scattering bars for sub-wavelength optical lithography | Physics | 18 | Active |
| US6482555B2 | Method of patterning sub-0.25&lgr; line features with high transmission, “attenuated” phase shift masks | Physics | 14 | Expired |
| US7820341B2 | Method of two dimensional feature model calibration and optimization | Physics | 10 | Active |
| US7434195B2 | Method for performing full-chip manufacturing reliability checking and correction | Physics | 9 | Expired |
| US7376930B2 | Method, program product and apparatus for generating assist features utilizing an image field map | Physics | 8 | Expired |
| US6835510B2 | Hybrid phase-shift mask | Physics | 7 | Expired |
| US7666554B2 | Method and apparatus for performing model-based layout conversion for use with dipole illumination | Physics | 7 | Active |
| US7774736B2 | Method and apparatus for providing optical proximity features to a reticle pattern for deep sub-wavelength optical lithography | Physics | 6 | Active |
| US7354681B2 | Scattering bar OPC application method for sub-half wavelength lithography patterning | Physics | 6 | Active |
| US7892707B2 | Scattering bar OPC application method for sub-half wavelength lithography patterning | Physics | 4 | Active |
| US7549140B2 | Method and apparatus for decomposing semiconductor device patterns into phase and chrome regions for chromeless phase lithography | Physics | 3 | Expired |
| US7485396B2 | Scattering bar OPC application method for sub-half wavelength lithography patterning | Physics | 2 | Active |
| US8039180B2 | Scattering bar OPC application method for sub-half wavelength lithography patterning | Physics | 1 | Active |
| US7985515B2 | Method and apparatus for performing model-based layout conversion for use with dipole illumination | Physics | 0 | Active |
| US11022894B2 | Rule-based deployment of assist features | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.