Antireflective composition for a deep ultraviolet photoresist
US6114085A · kind A · utility
51Cited by
7References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 18, 1998 |
| Grant date | Sep 5, 2000 |
| Priority date | — |
| Expiry date | Nov 18, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/091
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to a novel antireflecting coating composition, where the composition comprises a polymer, thermal acid generator and a solvent composition. The invention further comprises processes for the use of such a composition in photolithography. The composition strongly absorbs radiation ranging from about 130 nm (nanometer) to about 250 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.