Manufacturing method for ferroelectric film and nonvolatile memory using the same
US6114199A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 1996 |
| Grant date | Sep 5, 2000 |
| Priority date | — |
| Expiry date | Aug 28, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A ferroelectric thin film is subjected to heat treatment in an active oxygen atmosphere containing an oxidizing gas such as ozone, N.sub.2 O, or NO.sub.2, thereby preventing occurrence of oxygen defects (oxygen vacancies) in the thin film, and avoiding a deterioration in dielectric characteristics, ferroelectric characteristics, and electric characteristics required for the ferroelectric thin film, such as a reduction in permittivity, an increase in leakage current, a reduction in remanent polarization, and an increase in coercive electric field. Thus, the ferroelectric thin film having stable characteristics can be formed. Further, a nonvolatile memory cell using this ferroelectric thin film as a capacitor is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.