Self-aligned metal nitride for copper passivation
US6114238A · kind A · utility
71Cited by
7References
16Claims
0Family size
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Inventor
Key dates
| Filing date | May 20, 1998 |
| Grant date | Sep 5, 2000 |
| Priority date | — |
| Expiry date | May 20, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76855
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating metallization. A metal nitride layer is formed on the exposed surface of the metal layer. The metal nitride layer is used as a barrier layer to prevent short circuit, which is produced by metal diffusing into the inter-metal dielectrics. Therefore, the reliability of devices can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.