Heterolithic microwave integrated circuits
US6114716A · kind A · utility
25Cited by
6References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 25, 1997 |
| Grant date | Sep 5, 2000 |
| Priority date | — |
| Expiry date | Apr 25, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Silicon conductive vias and pedestals are disclosed for use in microwave integrated circuits. The pedestals are isolated from a ground plane on the bottom surface by glass, while the vias are used to make electrical contact to ground. Electrical circuit elements in the top surface of the integrated circuit are selectively grounded or isolated by the choice of connection to a via or pedestal, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.