Semiconductor memory device with overdriven sense amplifier and stabilized power-supply circuit of source follower type
US6115316A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 1999 |
| Grant date | Sep 5, 2000 |
| Priority date | — |
| Expiry date | Jun 29, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/06
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
To reduce current consumption, there is provided a circuit for each bank, comprising selection circuits 26 through 28 each for selecting either a normal supply voltage Vii or a higher supply voltage Vjj as a supply voltage VH0 in response to a selection control signals SC0 and *SC0, a selection control circuit 22 for generating the signals SC0 and *SC0 to make the selection circuits select Vii when a bank activation signal BRAS0 is inactive and Vjj for a predetermined period in response to activation of BRAS0, and sense amplifier driving circuits 111 through 113 for supplying the ground voltage and VH0 to the sense amplifier rows in response to activation of sense amplifier control signals. To stabilize the output voltage Vii of the power supply circuit having a NMOS transistor, the drain electrode, gate and source electrodes of which are at VCC, VG and approximately Vii=VG-Vth, where Vth is the threshold voltage of the NMOS transistor 45, a leak circuit is employed. The leak circuit has a NMOS transistor connected between Vii and ground. Wasteful power consumption by the current flowing to the leak circuit is negligibly small, e.g. 1 to 10 .mu.A, and the variation of the supply vo…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.