Ayako Kitamoto
29Patents
12h-index
20Co-inventors
77Inventor score
Filing activity: Jul 29, 1996 → Dec 22, 2005
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6172537A | Semiconductor device | Electricity | 49 | Expired |
| US6049239A | Variable delay circuit and semiconductor integrated circuit device | Electricity | 44 | Expired |
| US6605963B2 | Semiconductor integrated circuit and method of switching source potential of transistor in semiconductor integrated circuit | Electricity | 41 | Expired |
| US6229363A | Semiconductor device | Electricity | 40 | Expired |
| US6628564B1 | Semiconductor memory device capable of driving non-selected word lines to first and second potentials | Physics | 31 | Expired |
| US6115316A | Semiconductor memory device with overdriven sense amplifier and stabilized power-supply circuit of source follower type | Physics | 30 | Expired |
| US5936912A | Electronic device and semiconductor memory device using the same | Electricity | 26 | Expired |
| US6201378A | Semiconductor integrated circuit | Physics | 20 | Expired |
| US6236605A | Semiconductor integrated circuit and semiconductor memory device including overdriving sense amplifier | Physics | 16 | Expired |
| US6421292B1 | Semiconductor memory, and memory access method | Physics | 16 | Expired |
| US6072749A | Memory device preventing a slow operation through a mask signal | Physics | 13 | Expired |
| US6049493A | Semiconductor memory device having a precharge device | Physics | 12 | Expired |
| US6262930A | Semiconductor memory device with overdriven sense amplifier and stabilized power-supply circuit of source follower type | Physics | 12 | Expired |
| US5889718A | Dynamic type semiconductor memory device | Physics | 11 | Expired |
| US6111802A | Semiconductor memory device | Physics | 9 | Expired |
| US5943253A | Semiconductor memory device with efficient layout | Physics | 9 | Expired |
| US7079443B2 | Semiconductor device | Physics | 8 | Expired |
| US6147919A | Semiconductor memory employing direct-type sense amplifiers capable of realizing high-speed access | Physics | 8 | Expired |
| US6377101B1 | Variable delay circuit and semiconductor integrated circuit device | Electricity | 8 | Expired |
| US6515927B2 | Semiconductor memory having a wide bus-bandwidth for input/output data | Physics | 6 | Expired |
| US6115284A | Memory device with faster write operation | Physics | 5 | Expired |
| US6611472B2 | Memory circuit for preventing rise of cell array power source | Physics | 4 | Expired |
| US6252269A | Semiconductor memory device | Electricity | 4 | Expired |
| US6621327B2 | Substrate voltage selection circuit | Electricity | 4 | Expired |
| US6529434B2 | Semiconductor memory device with concurrent refresh and data access operation | Physics | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.