Formation of single-crystal thin SiC films

US6117233A · kind A · utility

Assignee

• Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US

Inventors

• Joachim Bill · Ditzingen, DE
• Frederick F. Lange · Lompoc, US
• Thomas Wagner · Steinbach-Hallenberg, DE
• Fritz Aldinger · Rodenbach, DE
• Detlef Heimann · Gerlingen, DE

Key dates

• Filing date: Aug 6, 1997
• Grant date: Sep 12, 2000
• Expiry date: Aug 6, 2017

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B29/36
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Thin, single-crystal SiC films are obtained by means of a pyrolysis process, the substrate to be coated being covered with a carbonaceous polysilane, the adhering layer being pyrolyzed in an inert atmosphere and the amorphous layer of SiC obtained in this way being crystallized by maintaining it at a temperature of over 700.degree. C. Using a special variation of the process, it is easy to form doped SiC films. To this end the dopant is added in the form of a silane compound.