Joachim Bill
2Patents
2h-index
7Co-inventors
30Inventor score
Filing activity: Aug 6, 1997 → Jun 27, 2000
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6254675A | Production of epitactic GaN layers on substrates | Electricity | 22 | Expired |
| US6117233A | Formation of single-crystal thin SiC films | Chemistry; Metallurgy | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.