Patent · US Expired

Single crystal growing apparatus and single crystal growing method

US6117234A · kind A · utility

5Cited by
3References
16Claims
0Family size

Assignee

Inventor

Key dates

Filing dateMar 10, 1998
Grant dateSep 12, 2000
Priority date
Expiry dateMar 10, 2018

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T117/1072
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

The object of the present invention is to provide an apparatus and a method for preventing dropping of a single crystal having large diameter and heavy weight in a chamber with reduced pressure and for pulling it in reliable and safe manner. After a seed crystal 24a is immersed in Si melt in a quartz crucible 14, the seed crystal is pulled up, and a neck portion 1a with small diameter is formed under the seed crystal 24a, and a spherical constricted portion 1b is formed under the neck portion 1a, whereby a tip 23a of a single crystal support 23 is opened so that it does not come into contact with the constricted portion 1b under pulling operation. When a second neck portion 1c under the constricted portion 1b is moved up to a standby position of the tip 23a of the single crystal support 23, rotation of an upper chamber 12 is started, and a rotating shaft 22 is rotated clockwise, and the tip 23a of the single crystal support 23 is closed to grip a site under the constricted portion 1b and the single crystal support 23 is moved up at the same rate as that of the wire 3 by rotating a ball screw shaft 21.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.