Hirotoshi Yamagishi
38Patents
11h-index
28Co-inventors
71Inventor score
Filing activity: Sep 9, 1988 → Oct 6, 2000
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5248378A | Method and apparatus for producing silicon single crystal | Emerging Cross-Sectional Technologies | 46 | Expired |
| US5667584A | Method for the preparation of a single crystal of silicon with decreased crystal defects | Emerging Cross-Sectional Technologies | 44 | Expired |
| US5126113A | Apparatus for producing czochralski-grown single crystals | Emerging Cross-Sectional Technologies | 42 | Expired |
| US5728211A | Silicon single crystal with low defect density and method of producing same | Chemistry; Metallurgy | 39 | Expired |
| US4956153A | Apparatus for Czochralski single crystal growing | Emerging Cross-Sectional Technologies | 36 | Expired |
| US5373805A | Single crystal pulling apparatus | Emerging Cross-Sectional Technologies | 31 | Expired |
| US5361721A | Single crystal pulling apparatus | Emerging Cross-Sectional Technologies | 17 | Expired |
| US5462010A | Apparatus for supplying granular raw material for a semiconductor single crystal pulling apparatus | Emerging Cross-Sectional Technologies | 15 | Expired |
| US5306387A | Method for pulling up semiconductor single crystal | Chemistry; Metallurgy | 12 | Expired |
| US5110404A | Method for heat processing of silicon | Emerging Cross-Sectional Technologies | 12 | Expired |
| US5359959A | Method for pulling up semi-conductor single crystal | Emerging Cross-Sectional Technologies | 12 | Expired |
| US5792255A | Manufacturing method of single crystal | Emerging Cross-Sectional Technologies | 11 | Expired |
| US5720809A | Crucible for pulling silicon single crystal | Emerging Cross-Sectional Technologies | 11 | Expired |
| US5550354A | High-frequency induction heating coil | Electricity | 11 | Expired |
| US5834322A | Heat treatment of Si single crystal | Electricity | 10 | Expired |
| US5386796A | Method for testing quality of silicon wafer | Chemistry; Metallurgy | 9 | Expired |
| US5067989A | Single crystal silicon | Chemistry; Metallurgy | 8 | Expired |
| US5556461A | Method for producing a silicon single crystal by a float-zone method | Emerging Cross-Sectional Technologies | 7 | Expired |
| US5258092A | Method of growing silicon monocrystalline rod | Emerging Cross-Sectional Technologies | 6 | Expired |
| US5340434A | Process for producing silicon single crystal | Chemistry; Metallurgy | 6 | Expired |
| US5843229A | Crystal holding apparatus | Emerging Cross-Sectional Technologies | 5 | Expired |
| US5348893A | Method for treatment of semiconductor wafer | Electricity | 5 | Expired |
| US6117234A | Single crystal growing apparatus and single crystal growing method | Emerging Cross-Sectional Technologies | 5 | Expired |
| US6113686A | Single crystal growing method and apparatus | Emerging Cross-Sectional Technologies | 5 | Expired |
| US5980630A | Manufacturing method of single crystal and apparatus of manufacturing the same | Emerging Cross-Sectional Technologies | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.