Method for fabricating semiconductor device having group III nitride
US6117700A · kind A · utility
31Cited by
1References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 2, 1999 |
| Grant date | Sep 12, 2000 |
| Priority date | — |
| Expiry date | Sep 2, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
First, n-type contact layer of GaN, n-type cladding layer of AlGaN, active layer of InGaN, first Mg-doped layer of AlGaN and second Mg-doped layer of GaN are grown in this order over a sapphire substrate. Thereafter, the substrate, including the second Mg-doped layer, is exposed to nitrogen plasma for about 40 minutes. As a result, Mg, which has been introduced into the first and second Mg-doped layers, is activated as an acceptor. Thus, p-type cladding layer and p-type contact layer with low resistance and excellent crystallinity can be formed out of the first and second Mg-doped layers, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.