Process for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectively
US6117750A · kind A · utility
85Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 21, 1998 |
| Grant date | Sep 12, 2000 |
| Priority date | — |
| Expiry date | Dec 21, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The process consists in depositing, by chemical vapor deposition using a mixture of silicon and germanium precursor gases, a single-crystal layer of silicon or germanium on a germanium or silicon substrate by decreasing or increasing the temperature in the range 800-450.degree. C. and at the same time by increasing the Si/Ge or Ge/Si weight ratio from 0 to 100% in the precursor gas mixture, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.