Self-aligned trenched-channel lateral-current-flow transistor
US6118161A · kind A · utility
21Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 29, 1998 |
| Grant date | Sep 12, 2000 |
| Priority date | — |
| Expiry date | Apr 29, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6213
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A transistor (100) having a strip channel or channels (108) in which the current flow in is the lateral direction between source (110) and drain (112). The gate (116) is located on the sidewalls and, if desired, the top of the strip channel (108). In a preferred embodiment of the invention, a disposable gate process is used that allows the source (110) and drain (112) regions to be self-aligned to the gate (116).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.