Method and apparatus for measuring the concentration of ions implanted in semiconductor materials
US6118533A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 1997 |
| Grant date | Sep 12, 2000 |
| Priority date | — |
| Expiry date | Sep 10, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/17
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and apparatus that determines a concentration of ions implanted in a material is described. The method includes the steps of: 1) generating at least two excitation laser sub-pulses and a probe pulse from a single pulse emitted from a laser; 2) irradiating a region of the material with a grating pattern formed by overlapping at least two excitation laser sub-pulses to initiate a time-dependent response in the region; 3) diffracting a probe laser pulse off the region to generate at least one time-dependent signal beam; 4) detecting at least one time-dependent signal beam to generate a signal waveform; and 5) processing the signal waveform to determine the concentration of ions implanted in the material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.