Circuit substrate and manufacture thereof, ceramic composition for circuit substrate, and electronics computer
US6118671A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 1998 |
| Grant date | Sep 12, 2000 |
| Priority date | — |
| Expiry date | Jun 24, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S428/901
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Ceramic circuit substrate which is sintered at 900 to 1,050.degree. C. and have low relative dielectric constant, thermal expansion coefficient comparable to that of silicon, and high bending strength, and a method of manufacturing are provided by using a glass with a softening point of 850 to 1,100.degree. C., that is, a glass having a composition included in an area in FIG. 1 (triangular composition diagram of SiO.sub.2 --B.sub.2 O.sub.3 --R.sub.2 O, a composition is represented by the position of a small circle, the number in a small circle represents the composition number) defined with lines connecting points representing the first, third, tenth, eleventh, and fourth compositions respectively as raw material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.