Semiconductor device and method of manufacturing the same
US6120301A · kind A · utility
7Cited by
20References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 24, 1996 |
| Grant date | Sep 19, 2000 |
| Priority date | — |
| Expiry date | Jul 24, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In the BGA in which the bonding portions of the support frame bonded to the wiring substrate via adhesive layer are molded by a resin, the areas of the bonding portions are each selected to be from 0.5 to 3.1 mm.sup.2. Furthermore, holes are formed in the substrate under the frame corresponding to the bonding portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.