Semiconductor processing system
US6120605A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 5, 1998 |
| Grant date | Sep 19, 2000 |
| Priority date | — |
| Expiry date | Feb 5, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4401
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A single wafer processing type of a semiconductor processing system is provided so as to achieve that residual particles inside a reactor thereof are efficiently removed and a gas injected into the reactor is uniformly flowed over a wafer in a wide range of the gas flow rate. The semiconductor processing system includes gas flow adjusting means (28, 29, 30) having a slit (30) communicated with an exhaust port (35) for pumping out a gas injected into a reactor (10) from the reactor (10). The slit (30) is provided annularly around a circumference of a wafer (34) and positioned below a position of the wafer (34), and a width of the slit (30) is narrowed about the exhaust port (35).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.