Patent assignee · JP · COMPANY

ASM Japan K.K.

195Patents
85Active
195Granted
50Portfolio score

Filing activity: May 21, 1991 → Oct 2, 2014 · 67 expiring within 5 years

Most-cited patents

PatentTitleAreaCited byStatus
US6383955B1 Silicone polymer insulation film on semiconductor substrate and method for forming the film Electricity 713 Expired
US6352945B1 Silicone polymer insulation film on semiconductor substrate and method for forming the film Emerging Cross-Sectional Technologies 610 Expired
US7919416B2 Method of forming conformal dielectric film having Si-N bonds by PECVD Electricity 578 Active
US8394466B2 Method of forming conformal film having si-N bonds on high-aspect ratio pattern Electricity 572 Active
US8669185B2 Method of tailoring conformality of Si-containing film Electricity 566 Active
US6455445B2 Silicone polymer insulation film on semiconductor substrate and method for forming the film Emerging Cross-Sectional Technologies 566 Expired
US7622369B1 Device isolation technology on semiconductor substrate Electricity 564 Active
US7651959B2 Method for forming silazane-based dielectric film Electricity 563 Active
US6435798B1 Semiconductor processing apparatus with substrate-supporting mechanism Emerging Cross-Sectional Technologies 562 Expired
US8329599B2 Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen Electricity 551 Active
US8173554B2 Method of depositing dielectric film having Si-N bonds by modified peald method Electricity 550 Active
US7972980B2 Method of forming conformal dielectric film having Si-N bonds by PECVD Electricity 543 Active
US7833353B2 Liquid material vaporization apparatus for semiconductor processing apparatus Chemistry; Metallurgy 540 Active
US6899507B2 Semiconductor processing apparatus comprising chamber partitioned into reaction and transfer sections Emerging Cross-Sectional Technologies 532 Expired
US6305898A Wafer transfer mechanism Electricity 526 Expired
US8592005B2 Atomic layer deposition for controlling vertical film growth Chemistry; Metallurgy 525 Active
US7021881B2 Semiconductor processing apparatus comprising chamber partitioned into reaction and transfer sections Emerging Cross-Sectional Technologies 522 Expired
US7963736B2 Wafer processing apparatus with wafer alignment device Emerging Cross-Sectional Technologies 517 Active
US8901016B2 Method of forming metal oxide hardmask Electricity 517 Active
US7618226B2 Semiconductor substrate transfer apparatus and semiconductor substrate processing apparatus equipped with the same Electricity 517 Active
US8647722B2 Method of forming insulation film using plasma treatment cycles Chemistry; Metallurgy 516 Active
US7825040B1 Method for depositing flowable material using alkoxysilane or aminosilane precursor Electricity 514 Active
US9171716B2 Method of forming metal oxide hardmask Electricity 512 Active
US6187691A Method of forming film on semiconductor substrate in film-forming apparatus Emerging Cross-Sectional Technologies 511 Expired
USD643055S1 Heater block for use in a semiconductor processing tool General 508 Expired

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.