Monolithic silicon-based nitride display device
US6120909A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 1998 |
| Grant date | Sep 19, 2000 |
| Priority date | — |
| Expiry date | Aug 19, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B41/52
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A color display device which may be used as a gallium nitride (LED) light emitting diode based traffic light is disclosed. Unlike previous large GaN based display devices, which have been built up from numerous small display elements formed on sapphire substrates, the disclosed device preferably uses an entire monolithic silicon wafer as both a substrate and for connection as a whole as a conducting first electrode, a light emitting layered structure of GaN-based materials over the entire monolithic silicon substrate, and a substantially transparent metallic second electrode layer over the layered structure. In order to emit desired traffic light colors (e.g. yellow, red), a color conversion layer is disposed over the transparent metallic electrode layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.