Photoresist with bleaching effect
US6120977A · kind A · utility
3Cited by
8References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 3, 1996 |
| Grant date | Sep 19, 2000 |
| Priority date | — |
| Expiry date | Apr 3, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/122
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An exposure technique which accomplishes high transparency and the prevention of influence of reflected light in the ultraviolet region of KrF excimer laser light, the technique being capable of decreasing reflected light by employing a base polymer having high transparency in the ultraviolet region and by employing a bleaching agent in combination with a photo acid generator, the bleaching agent being capable of preventing the formation of eaves in an upper portion of a resist pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.