Methods of forming power semiconductor devices having merged split-well body regions therein
US6121089A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 1998 |
| Grant date | Sep 19, 2000 |
| Priority date | — |
| Expiry date | Jun 5, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/157
Abstract
Methods of forming power semiconductor devices having merged split-well body regions include the steps of forming a semiconductor substrate containing a drift region of first conductivity type (e.g., N-type) therein extending to a first face thereof. First and second split-well body regions of second conductivity type (e.g., P-type) may also be formed at spaced locations in the drift region. First and second source regions of first conductivity type are also formed in the first and second split-well body regions, respectively. A central body/contact region of second conductivity type is also formed in the drift region, at a location intermediate the first and second split-well body regions. The central body/contact region preferably forms non-rectifying junctions with the first and second split-well body regions and a P-N rectifying junction with the drift region at a central junction depth which is less than the maximum well junction depths of the split-well body regions. First and second insulated gate electrodes may also be formed on the first face, opposite respective portions of the first and second split-well regions. Proper choice of drift region resistivity and implant cond…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.