Inventor · Torrance, CA, US

Jun Zeng

125Patents
18h-index
68Co-inventors
89Inventor score

Filing activity: Mar 13, 1987 → Jun 25, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US6188105A High density MOS-gated power device and process for forming same Electricity 139 Expired
US6683346B2 Ultra dense trench-gated power-device with the reduced drain-source feedback capacitance and Miller charge Electricity 120 Expired
US8076719B2 Semiconductor device structures and related processes Electricity 116 Active
US6351009B1 MOS-gated device having a buried gate and process for forming same Electricity 53 Expired
US8704295B1 Schottky and MOSFET+Schottky structures, devices, and methods Electricity 46 Active
US6121089A Methods of forming power semiconductor devices having merged split-well body regions therein Electricity 43 Expired
US8486941B2 Phenyl amino pyrimidine compounds and uses thereof Chemistry; Metallurgy 42 Active
US8319278B1 Power device structures and methods using empty space zones Electricity 37 Active
US6246090A Power trench transistor device source region formation using silicon spacer Electricity 32 Expired
US6638826B2 Power MOS device with buried gate Electricity 30 Expired
US9093522B1 Vertical power MOSFET with planar channel and vertical field plate Electricity 29 Active
US6784505B2 Low voltage high density trench-gated power device with uniformly doped channel and its edge termination technique Electricity 28 Expired
US6362026B1 Edge termination for silicon power devices Emerging Cross-Sectional Technologies 26 Expired
US6104062A Semiconductor device having reduced effective substrate resistivity and associated methods Electricity 24 Expired
US6921939B2 Power MOSFET and method for forming same using a self-aligned body implant Emerging Cross-Sectional Technologies 23 Expired
US6445035B1 Power MOS device with buried gate and groove Electricity 23 Expired
US10353616B1 Managing data relocation in storage systems Physics 22 Active
US6373098B1 Trench-gated device having trench walls formed by selective epitaxial growth and process for forming device Electricity 21 Expired
US7910439B2 Super self-aligned trench MOSFET devices, methods, and systems Electricity 17 Active
US7105228B2 Method for making shaped structures with internally coated cavities Emerging Cross-Sectional Technologies 15 Expired
US9227189B2 Microfluidic liquid stream configuration system Performing Operations; Transporting 15 Active
US6946348B2 Low voltage high density trench-gated power device with uniformity doped channel and its edge termination technique Electricity 15 Expired
US6242784A Edge termination for silicon power devices Emerging Cross-Sectional Technologies 15 Expired
US8390060B2 Power semiconductor devices, structures, and related methods Electricity 14 Active
US6455379B2 Power trench transistor device source region formation using silicon spacer Electricity 12 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.