Method for fabricating gate oxide
US6121095A · kind A · utility
4Cited by
5References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 13, 1998 |
| Grant date | Sep 19, 2000 |
| Priority date | — |
| Expiry date | Nov 13, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28211
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating gate oxide includes a dilute wet oxidation process with additional nitrogen and moisture and an annealing process with a nitrogen base gas, wherein the volume of additional nitrogen is about 6-12 times of the volume of the additional moisture. The method according to the invention improves the electrical quality of the gate oxide by raising the Q.sub.bd and by reducing the leakage current of the gate oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.