Resistor fabrication
US6121119A · kind A · utility
24Cited by
62References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 29, 1997 |
| Grant date | Sep 19, 2000 |
| Priority date | — |
| Expiry date | May 29, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The fabrication of a resistor structure is described. A resistive region is formed over the top of a substrate. Trenches are formed from the top side of the substrate in scribe line regions where the wafer is to be separated to form resistor modules. Contact layers are formed over the top side of the substrate and are electrically coupled to each end of the resistive region, respectively. The contact layers are also formed over the sidewalls of the trenches. The wafer is separated through the trenches, creating resistor modules having sidewall contact regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.