Method of contact structure formation
US6121129A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 15, 1997 |
| Grant date | Sep 19, 2000 |
| Priority date | — |
| Expiry date | Jan 15, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/485
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor structure having features of differing sizes, includes forming a first layer on a semiconductor substrate; patterning only a first plurality of features of a first feature size on the first layer; removing portions of the first layer, the portions corresponding to the first plurality of features, filling the first plurality of openings; forming a second layer, the second layer overlying the first layer and the filled openings; patterning a second plurality of features of a second feature size on the second layer; removing portions of the first layer and second layer, the portions corresponding to the second plurality of features, the second plurality of openings extending through the first and second layers, and filling the second plurality openings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.