Ferroelectric based memory devices utilizing hydrogen getters and recovery annealing
US6121648A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 25, 1999 |
| Grant date | Sep 19, 2000 |
| Priority date | — |
| Expiry date | May 25, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/689
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A ferroelectric memory cell for storing information and a method for fabricating the same. The information is stored in the remnant polarization of a ferroelectric dielectric layer by setting the direction of the remnant polarization. The ferroelectric memory cell is designed to store the information at a temperature less than a first temperature. During the fabrication process, the memory cell is subjected to an annealing operation in the presence of hydrogen at a second temperature and a packaging operation at a third temperature. The memory cell includes top and bottom contacts that sandwich the dielectric layer which includes a ferroelectric material having a Curie point greater than the first temperature and less than the second and third temperatures. The dielectric layer is encapsulated in an oxygen impermeable material such that the encapsulating layer prevents oxygen from entering or leaving the dielectric layer. The memory also includes a hydrogen barrier layer that inhibits the flow of hydrogen to the top and bottom electrodes when the memory cell is placed in a gaseous environment containing hydrogen. In one embodiment of the invention, a hydrogen-absorbing layer is con…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.