Method of forming gate oxide having dual thickness by oxidation process
US6124171A · kind A · utility
51Cited by
15References
5Claims
0Family size
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Key dates
| Filing date | Sep 24, 1998 |
| Grant date | Sep 26, 2000 |
| Priority date | — |
| Expiry date | Sep 24, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/981
Abstract
Transistors are formed on the substrate having two different thickness' of gate oxides. A silicon nitride mask is used to protect one of the gate oxides while the other is grown. A nitride mask is formed from a hydrogen balanced nitride layer formed using direct plasma deposited nitride with an ammonia and silane chemistry. In one embodiment the nitride mask remains in place in the completed transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.