Method of cleaning surface of substrate and method of manufacturing semiconductor device
US6124210A · kind A · utility
11Cited by
4References
12Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | May 24, 1999 |
| Grant date | Sep 26, 2000 |
| Priority date | — |
| Expiry date | May 24, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method of cleaning a surface of a substrate employed prior to film formation by using the CVD method which uses a reaction gas containing an ozone containing gas which contains ozone (O.sub.3) in oxygen (O.sub.2) and tetraethylorthosilicate (TEOS). The substrate surface cleaning method comprises the steps of oxidizing particles 13 by contacting a pre-process gas containing ozone 15 to a surface 12 of a substrate 11 on which the particles 13 are present, and removing the particles 13 by heating the substrate 11 to exceed a decomposition point of oxide 13a of the particles 13.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.