Chemical mechanical polishing process for layers of semiconductor or isolating materials
US6126518A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 3, 1998 |
| Grant date | Oct 3, 2000 |
| Priority date | — |
| Expiry date | Apr 3, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Chemical mechanical polishing process for a layer of semiconductor material such as polycrystalline silicon, epitaxial single-crystal silicon, amorphous silicon or an isolating material such as phosphosilicate glass or borophosphosilicate glass used in the microelectronics semiconductors industry, with the exception of the initial silicon used in the manufacture of wafers for integrated circuits, in which an abrasion of the layer of semiconductor material or isolating material is carried out by rubbing the said layer with a fabric impregnated with an abrasive composition, the abrasive consisting of an aqueous suspension having a neutral pH or a pH close to neutrality of individualised colloidal silica particles, not linked together by siloxane bonds, and water as the suspension medium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.