Positive photoresist compositions and multilayer resist materials using same
US6127087A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 1998 |
| Grant date | Oct 3, 2000 |
| Priority date | — |
| Expiry date | Jun 17, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/022
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A positive photoresist composition comprises (A) an alkali-soluble resin, and (B) at least one quinonediazide group-containing compound in which part or all of the hydroxyl groups of a compound represented by the following formula (I) are esterified with a quinonediazidesulfonic acid: ##STR1## wherein each of R.sup.1 and R.sup.2 is an alkyl group having 1 to 5 carbon atoms, and "a" is 0 or 1. The present invention provides a positive photoresist composition which can form a resist pattern having high film residual rate, improved development contrast between exposed portions and unexposed portions, and satisfactory definition, exposure margin, focal depth range properties and sectional shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.