Interlevel dielectrics with reduced dielectric constant
US6127285A · kind A · utility
23Cited by
8References
5Claims
0Family size
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Key dates
| Filing date | Feb 13, 1998 |
| Grant date | Oct 3, 2000 |
| Priority date | — |
| Expiry date | Feb 13, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure and method to further reduce the dielectric constant (capacitance) of high density plasma chemical vapor deposited silicon dioxide (SiO2 12). The dielectric constant of voids (i.e. air pockets) is close to k=1.0, and therefore the microvoids reduce the effective dielectric constant of the silicon dioxide 12. Use of HDPCVD conditions avoids residual hydrogen, which would degrade the dielectric constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.