Apparatus and process for deposition of thin film on semiconductor substrate while inhibiting particle formation and deposition
US6127286A · kind A · utility
3Cited by
1References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 11, 1998 |
| Grant date | Oct 3, 2000 |
| Priority date | — |
| Expiry date | May 11, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/909
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Gaseous reactants capable of depositing a thin film on a semiconductor substrate are introduced into a deposition zone of a deposition apparatus through a gaseous reactants dispersion apparatus having rounded corners and smoothed anodized surfaces and maintained at a temperature ranging from about 70.degree. C. to about 85.degree. C., and preferably from about 75.degree. C. to about 80.degree. C., to inhibit the deposition and accumulation on such surfaces of charged materials capable of generating particles which may cause damage to the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.