Inventor · Fremont, CA, US

Ming-Yi Lee

22Patents
7h-index
36Co-inventors
65Inventor score

Filing activity: Aug 28, 1997 → Feb 2, 2015

Most-cited inventions

PatentTitleAreaCited byStatus
US5851890A Process for forming integrated circuit structure with metal silicide contacts using notched sidewall spacer on gate electrode Electricity 57 Expired
US6613637B1 Composite spacer scheme with low overlapped parasitic capacitance Electricity 20 Expired
US6391768B1 Process for CMP removal of excess trench or via filler metal which inhibits formation of concave regions on oxide surface of integrated circuit structure Electricity 15 Expired
US6315649A Wafer mounting plate for a polishing apparatus and method of using Electricity 13 Expired
US7619294B1 Shallow trench isolation structure with low trench parasitic capacitance Electricity 9 Active
US7001823B1 Method of manufacturing a shallow trench isolation structure with low trench parasitic capacitance Electricity 8 Expired
US9449656B2 Memory with bit cell header transistor Physics 8 Active
US6737342B1 Composite spacer scheme with low overlapped parasitic capacitance Electricity 7 Expired
US6319836A Planarization system Electricity 6 Expired
US9412742B2 Layout design for manufacturing a memory cell Electricity 6 Active
US8226128B2 Releasable nut-free C-clip secured pipe fitting Mechanical Engineering; Lighting; Heating 4 Active
US6604257B1 Apparatus and method for cleaning a conduit Electricity 3 Expired
US8965102B2 System and method for defect analysis of a substrate Physics 3 Active
US6127286A Apparatus and process for deposition of thin film on semiconductor substrate while inhibiting particle formation and deposition Emerging Cross-Sectional Technologies 3 Expired
US6586332B1 Deep submicron silicide blocking Electricity 3 Expired
US8482990B2 Memory edge cell Physics 2 Active
US6989331B2 Hard mask removal Electricity 2 Expired
US9734572B2 System and method for defect analysis of a substrate Physics 2 Active
US6727165B1 Fabrication of metal contacts for deep-submicron technologies Electricity 2 Expired
US8021955B1 Method characterizing materials for a trench isolation structure having low trench parasitic capacitance Electricity 1 Active
US8665654B2 Memory edge cell Physics 1 Active
US6916700B1 Mixed-mode process Electricity 0 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.