Lateral field effect transistor of SiC, a method for production thereof and a use of such a transistor

US6127695A · kind A · utility

Assignee

• Acreo AB · SE

Inventors

• Christopher Harris · Sollentuna, SE
• Andrei Konstantinov · Linköping, SE

Key dates

• Filing date: Feb 8, 1999
• Grant date: Oct 3, 2000
• Expiry date: Feb 8, 2019

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/931

Abstract

A lateral field effect transistor of SiC for high switching frequencies comprises a source region layer (5) and a drain region layer (6) laterally spaced and highly doped n-type, an n-type channel layer (4) extending laterally and interconnecting the source region layer and the drain region layer for conducting a current between these layers in the on-state of the transistor, and a gate electrode (9) arranged to control the channel layer to be conducting or blocking through varying the potential applied to the gate electrode. A highly doped p-type base layer (12) is arranged next to the channel layer at least partially overlapping the gate electrode and being at a lateral distance to the drain region layer. The base layer is shorted to the source region layer.