Field-effect transistor having local threshold-adjust doping
US6127700A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 12, 1995 |
| Grant date | Oct 3, 2000 |
| Priority date | — |
| Expiry date | Sep 12, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/856
Abstract
An insulated-gate field-effect transistor utilizes local threshold-adjust doping to control the voltage at which the transistor turns on. The local threshold-adjust doping is present along part, but not all, of the lateral extent of the channel. In the transistor structure, a channel zone laterally separates a pair of source/drain zones. The channel zone is formed with a main channel portion and a more heavily doped threshold channel portion that contains the local threshold-adjust doping. Gate dielectric material vertically separates the channel zone from an overlying gate electrode. The transistor is a long device in that the gate electrode is longer, preferably at least 50% longer, than the gate electrode of a minimum-sized transistor whose gate length is approximately the minimum feature size. The long-gate transistor is suitable for use in analog and high-voltage digital portions of a VLSI circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.