Plasma processing apparatus and plasma processing method
US6129806A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 1997 |
| Grant date | Oct 10, 2000 |
| Priority date | — |
| Expiry date | Feb 28, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32678
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus and method are provided which are capable of easily performing precise working of a fine pattern on a large sized sample having a diameter of 300 mm or larger, and also capable of improving selectivity during micro processing. The apparatus includes a vacuum processing chamber, a plasma generating arrangement including a pair of electrodes, a sample table for mounting a sample to be processed inside the vacuum processing chamber and also serving as one of the electrodes, and an evacuating means for evacuating the vacuum processing chamber. The apparatus further includes a high frequency electric power source for applying an electric power of VHF band from 50 MHz to 200 MHz between the pair of electrodes. A magnetic field forming structure is also provided for forming a static magnetic field or a low frequency magnetic field larger than 10 gauss and smaller than 110 gauss in a direction intersecting an electric field generated between the pair of electrodes and in the vicinity thereof by the high frequency electric power source. The magnetic field forming structure is set so that a portion where a component of the magnetic field in a direction along the…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.