Deposition rate control on wafers with varying characteristics
US6130105A · kind A · utility
11Cited by
6References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 28, 1997 |
| Grant date | Oct 10, 2000 |
| Priority date | — |
| Expiry date | Aug 28, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/52
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention is a method and apparatus for depositing a film on a substrate. According to the present invention a characteristic of a substrate is determined. The substrate is then heated by heat from an upper heat source and heat from a lower heat source wherein the ratio of heat supplied from the upper heat source relative to the lower heat source is dependent upon the determined wafer characteristic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.