Bipolar transistor with L-shaped base-emitter spacer
US6130136A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 1998 |
| Grant date | Oct 10, 2000 |
| Priority date | — |
| Expiry date | Nov 19, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/054
Abstract
A method for fabricating a spacer in a transistor. The method comprises the steps of forming a stepped feature 384, 386 at a surface of a semiconductor body 340, the stepped feature having a lateral face substantially parallel to the surface and an angled face substantially perpendicular to the surface. An insulating layer 410 is formed over the lateral and angled faces of the stepped feature 384, 386 and a sacrificial layer 404 is formed over the insulating layer and over the lateral and angled faces of the stepped feature. The portion of the sacrificial layer over the lateral face is removed to expose portions of the insulating layer and to leave a portion of the sacrificial layer to cover the angled face of the stepped feature. Finally, the exposed portions of the insulating layer are removed to leave an L-shaped insulator layer, such as may be useful to insulate the base electrode from the emitter electrode in a bipolar transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.