Miniaturized secondary electron detector
US6130429A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 23, 1998 |
| Grant date | Oct 10, 2000 |
| Priority date | — |
| Expiry date | Nov 23, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2448
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
To miniaturize a secondary-electron detector, a ring-shaped secondary-electron emissive material layer 44A is formed on a ring-shaped base 41 having a round hole 41a, via a ring-shaped insulating layer 42A and a ring-shaped high resistance layer 43A. Similarly, a ring-shaped secondary-electron emissive material layer 44B is formed on a ring-shaped base 33 having a round hole 33a, via a ring-shaped insulating layer 42B and a ring-shaped high resistance layer 43B. A arc-shaped multiplied-electron collecting electrode 461 is joined between the insulating layers 42A and 42B outside the secondary-electron emissive material layer 44B. A porous secondary-electron multiplication substance may be filled between opposed bases instead of the secondary-electron emissive material layers 44A and 44B, and an optical fiber coated with phosphor may be used instead of the electrode 461.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.