Vapor-phase film growth apparatus and gas ejection head
US6132512A · kind A · utility
155Cited by
9References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 8, 1998 |
| Grant date | Oct 17, 2000 |
| Priority date | — |
| Expiry date | Jan 8, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/14
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A vapor-phase film growth apparatus includes a substrate holder for holding a substrate, a gas ejection head, and a radiant heat shield device. The substrate holder has a substrate heater therein, and the gas ejection head has a gas injection surface for ejecting a material gas toward a substrate held by the substrate holder. The radiant heat shield device is disposed between the substrate holder and the gas injection head in confronting relationship to the gas injection surface of the gas ejection nozzle. The substantially planar radiant heat shield device is permeable to gases and has a heating capability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.