Reactive sputtering process

US6132563A · kind A · utility

Assignee

• Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US

Inventors

• Peter Frach · Radeberg, DE
• Hendrik Walde · Fort Collins, US
• Christian Gottfried · Dresden, DE
• Klaus Goedicke · Dresden, DE

Key dates

• Filing date: Sep 30, 1997
• Grant date: Oct 17, 2000
• Expiry date: Sep 30, 2017

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C14/54
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

In magnetron-type reactive sputtering the properties of the deposited layer are to remain constant throughout the entire use of a target, independey of the state of erosion, even after an exchange of targets. The method is also to be applicable for magnetron sputtering sources having a target consisting of several components with different partial discharge powers. Before sputtering of the substrates, the magnetic field strength associated with each partial target is set without reactive gas. Thereafter, a predetermined set of values of characteristic parameters is set by control of the reactive gas flow. During the subsequent sputtering the set of values predetermined for each partial target is kept constant by the controllable reactive gas flow. The first two steps are repeated at certain intervals in dependence of time the targets are used. Optical coatings or corrosion protection coatings may be fabricated by reactive sputtering in accordance with this method.