Method and apparatus for achieving etch rate uniformity in a reactive ion etcher
US6132632A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 1997 |
| Grant date | Oct 17, 2000 |
| Priority date | — |
| Expiry date | Sep 11, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3266
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for achieving etch rate uniformity in a reactive ion etcher. The reactive ion etcher generates a plasma within a vacuum chamber for etching a substrate disposed at a cathode of a reactor can within the chamber wherein the plasma emanates from a top plate of the reactor can, and is influenced by localized magnetic fields for locally controlling etch rates across the cathode to produce a uniform etch rate distribution across the cathode as a result of the localized magnetic field. The magnet array may be disposed between the top plate and the vacuum chamber for providing the localized magnetic fields. The magnet array includes a plurality of individual magnets and a grid plate for holding the individual magnets in position.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.