ArF photoresist copolymers
US6132926A · kind A · utility
46Cited by
10References
40Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 1997 |
| Grant date | Oct 17, 2000 |
| Priority date | — |
| Expiry date | Dec 30, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/039
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoresist including a copolymer prepared from bicycloalkene derivative, maleic anhydride and/or vinylene carbonate, which has molecular weight ranging from about 3,000 to 100,000. The photoresist can be used for submicrolithography employing deep ultra violety as a light source. In addition to being of high etch resistance and thermal resistance, the photoresist has good adhesiveness and can be developed in a TMAH solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.