Fabrication of semiconductor light-emitting device
US6133058A · kind A · utility
15Cited by
7References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 3, 1999 |
| Grant date | Oct 17, 2000 |
| Priority date | — |
| Expiry date | Feb 3, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0365
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor light-emitting device with a double hetero structure, including: an active layer made of Ga.sub.1-x In.sub.x N (0.ltoreq.x.ltoreq.0.3) doped with a p-type impurity and an n-type impurity; and first and second cladding layers provided so as to sandwich the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.