Method of depositing film for semiconductor device in single wafer type apparatus using a lamp heating method
US6133148A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 3, 1998 |
| Grant date | Oct 17, 2000 |
| Priority date | — |
| Expiry date | Nov 3, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/907
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of depositing a thin film for a semiconductor device using a lamp heating type apparatus. In the method, a wafer is loaded into a processing chamber of the apparatus, and the pressure of the chamber and the temperature of a susceptor installed in the chamber are increased to a level higher than a deposition pressure and a deposition temperature, respectively. Then, the pressure of the chamber and the temperature of the susceptor are decreased to the deposition pressure and the deposition temperature, respectively, and a film is deposited on the wafer. The vacuum of the chamber is then released and the gas remaining in the chamber and a source gas injection tube is purged.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.