Seok-Jun Won
86Patents
13h-index
73Co-inventors
83Inventor score
Filing activity: Mar 6, 1998 → Jun 8, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9029244B2 | Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus | Emerging Cross-Sectional Technologies | 398 | Active |
| US6218260A | Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed thereby | Emerging Cross-Sectional Technologies | 52 | Expired |
| US6580111B2 | Metal-insulator-metal capacitor | Electricity | 37 | Expired |
| US7481882B2 | Method for forming a thin film | Chemistry; Metallurgy | 31 | Expired |
| US6667209B2 | Methods for forming semiconductor device capacitors that include an adhesive spacer that ensures stable operation | Electricity | 24 | Expired |
| US6136641A | Method for manufacturing capacitor of semiconductor device including thermal treatment to dielectric film under hydrogen atmosphere | Electricity | 23 | Expired |
| US6207489A | Method for manufacturing capacitor of semiconductor memory device having tantalum oxide film | Electricity | 20 | Expired |
| US7084056B2 | Electrical interconnection, method of forming the electrical interconnection, image sensor having the electrical interconnection and method of manufacturing the image sensor | Electricity | 17 | Expired |
| US7018933B2 | Method of forming a metal-insulator-metal capacitor | Electricity | 17 | Expired |
| US7091548B2 | Analog capacitor having at least three high-k-dielectric layers, and method of fabricating the same | Electricity | 17 | Expired |
| US7002788B2 | Capacitor including a dielectric layer having an inhomogeneous crystalline region and method of fabricating the same | Electricity | 15 | Expired |
| US7232492B2 | Method of forming thin film for improved productivity | Electricity | 15 | Expired |
| US6133148A | Method of depositing film for semiconductor device in single wafer type apparatus using a lamp heating method | Emerging Cross-Sectional Technologies | 14 | Expired |
| US7394641B2 | MEMS tunable capacitor with a wide tuning range | Electricity | 13 | Active |
| US7623338B2 | Multiple metal-insulator-metal capacitors and method of fabricating the same | Electricity | 12 | Active |
| US9287181B2 | Semiconductor device and method for fabricating the same | Electricity | 12 | Active |
| US6750092B2 | Methods of forming ruthenium film by changing process conditions during chemical vapor deposition and ruthenium films formed thereby | Electricity | 11 | Expired |
| US6680251B2 | Methods of chemical vapor depositing ruthenium by varying chemical vapor deposition parameters | Electricity | 10 | Expired |
| US7297591B2 | Method for manufacturing capacitor of semiconductor device | Electricity | 10 | Expired |
| US6624069B2 | Methods of forming integrated circuit capacitors having doped HSG electrodes | Emerging Cross-Sectional Technologies | 10 | Expired |
| US6537875B2 | Semiconductor memory device for reducing damage to interlevel dielectric layer and fabrication method thereof | Electricity | 9 | Expired |
| US6946342B2 | Semiconductor device and method for manufacturing the same | Electricity | 9 | Expired |
| US7288453B2 | Method of fabricating analog capacitor using post-treatment technique | Electricity | 9 | Expired |
| US6677217B2 | Methods for manufacturing integrated circuit metal-insulator-metal capacitors including hemispherical grain lumps | Electricity | 9 | Expired |
| US7633112B2 | Metal-insulator-metal capacitor and method of manufacturing the same | Electricity | 8 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.