Method of forming a film by using plasmanized process gas containing gaseous H.sub.2 O and an auxiliary gas in a semiconductor device
US6133162A · kind A · utility
7Cited by
9References
17Claims
0Family size
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Key dates
| Filing date | Jul 21, 1997 |
| Grant date | Oct 17, 2000 |
| Priority date | — |
| Expiry date | Jul 21, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a film forming pre-treatment method used when silicon containing insulating film, etc. are to be formed by virtue of thermal CVD method on a substrate 101 on which interconnection layers, etc. are formed. Before an insulating film is deposited on the substrate 101, gaseous H.sub.2 O is plasmanized and then a surface of the substrate 101 is exposed to such plasmanized H.sub.2 O.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.