Compound semiconductor device and method for producing the same
US6133592A · kind A · utility
9Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 19, 1997 |
| Grant date | Oct 17, 2000 |
| Priority date | — |
| Expiry date | Feb 19, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8164
Abstract
A compound semiconductor device includes a contact structure having a plurality of layers provided on a compound semiconductor layer and an electrode provided on the contact structure. The contact structure includes a first contact layer made of In.sub.x Ga.sub.1-x As (0.9.ltoreq.x.ltoreq.1) on the side closest to the electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.