Anti-reflection oxynitride film for tungsten-silicide substrates
US6133613A · kind A · utility
27Cited by
5References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 3, 1998 |
| Grant date | Oct 17, 2000 |
| Priority date | — |
| Expiry date | Feb 3, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0276
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides an anti-reflection film for lithographic application on tungsten-silicide containing substrate. In one embodiment of the present invention, a structure for improving lithography patterning in integrated circuit comprises a tungsten-silicide layer, a diaphanous layer located above the tungsten-silicide layer, an anti-reflection layer located above the diaphanous layer, and a photoresist layer located above the anti-reflection layer for patterning the integrated circuit pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.